FDV302PNB8V001. Аналоги и основные параметры
Наименование производителя: FDV302PNB8V001
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 7 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 10 Ohm
Тип корпуса: SOT-23
Аналог (замена) для FDV302PNB8V001
- подборⓘ MOSFET транзистора по параметрам
FDV302PNB8V001 даташит
fdv302p.pdf
October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t
fdv302p d87z fdv302p nb8v001.pdf
October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t
fdv302p.pdf
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Другие IGBT... FDU8876, FDU8878, FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, 5N60, FDV303NNB9U008, FDV304PD87Z, FDV304PNB8U003, FDW252P, FDW254P, FDW254PZ, FDW256P, FDW258P
History: SPB04N50C3
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