FDV302PNB8V001 Specs and Replacement
Type Designator: FDV302PNB8V001
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT-23
FDV302PNB8V001 substitution
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FDV302PNB8V001 datasheet
fdv302p.pdf
October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t... See More ⇒
fdv302p d87z fdv302p nb8v001.pdf
October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t... See More ⇒
fdv302p.pdf
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Detailed specifications: FDU8876, FDU8878, FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, 5N60, FDV303NNB9U008, FDV304PD87Z, FDV304PNB8U003, FDW252P, FDW254P, FDW254PZ, FDW256P, FDW258P
Keywords - FDV302PNB8V001 MOSFET specs
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FDV302PNB8V001 substitution
FDV302PNB8V001 replacement
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