FDV302PNB8V001 Datasheet and Replacement
Type Designator: FDV302PNB8V001
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT-23
FDV302PNB8V001 substitution
FDV302PNB8V001 Datasheet (PDF)
fdv302p.pdf

October 1997 FDV302P Digital FET, P-Channel General Description Features-25 V, -0.12 A continuous, -0.5 A Peak.This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially tailored t
fdv302p d87z fdv302p nb8v001.pdf

October 1997 FDV302P Digital FET, P-Channel General Description Features-25 V, -0.12 A continuous, -0.5 A Peak.This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially tailored t
fdv302p.pdf

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Datasheet: FDU8876 , FDU8878 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , 13N50 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P , FDW254PZ , FDW256P , FDW258P .
History: 2SK492 | BSO204P | TPV70R190C | MMP3401 | PHU101NQ03LT | FHD4N65E | YJD45P03A
Keywords - FDV302PNB8V001 MOSFET datasheet
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FDV302PNB8V001 substitution
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History: 2SK492 | BSO204P | TPV70R190C | MMP3401 | PHU101NQ03LT | FHD4N65E | YJD45P03A



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