FDV303NNB9U008 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDV303NNB9U008
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.68 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.5 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: SOT-23

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FDV303NNB9U008 Datasheet (PDF)

7.1. Size:47K fairchild semi
fdv303n nb9u008.pdf

August 1997 FDV303N Digital FET, N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These N-Channel enhancement mode field effect transistors areRDS(ON) = 0.45 @ VGS = 4.5 Vproduced using Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is tailored to minimizeRDS(ON) = 0.6 @ VGS= 2.7 V.on-state resistanc

7.2. Size:65K fairchild semi
fdv303n.pdf

7.3. Size:1238K kexin
fdv303n.pdf

SMD Type MOSFETN-Channel MOSFETFDV303N (KDV303N)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 25V ID = 0.68 A1 2 RDS(ON) 450m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 600m (VGS = 2.7V)1.9-0.11.GateD2.Source3.DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dra

7.4. Size:1245K kexin
fdv303n-3.pdf

SMD Type MOSFETN-Channel MOSFETFDV303N (KDV303N)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 25V ID = 0.68 A1 2 RDS(ON) 450m (VGS = 4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 600m (VGS = 2.7V)1.GateD2.Source3.DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

7.5. Size:546K cn shikues
fdv303n.pdf

FDV303NN-Channel Enhancement Mode MOSFETFeature20V/2A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) .Reliable and Rugged. SOT-23 for Surface Mount Package. ApplicationsPower Management SOT-23Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=

7.6. Size:2319K cn vbsemi
fdv303n.pdf

FDV303Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

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