FDV303NNB9U008 Datasheet. Equivalente

 7.1. Size:47K  fairchild semi
 fdv303n nb9u008.pdf

August 1997 FDV303N Digital FET, N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These N-Channel enhancement mode field effect transistors are RDS(ON) = 0.45 @ VGS = 4.5 V produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize RDS(ON) = 0.6 @ VGS= 2.7 V. on-state resistanc

 7.2. Size:65K  fairchild semi
 fdv303n.pdf

August 1997 FDV303N Digital FET, N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These N-Channel enhancement mode field effect transistors are RDS(ON) = 0.45 @ VGS = 4.5 V produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize RDS(ON) = 0.6 @ VGS= 2.7 V. on-state resistanc

 7.3. Size:1238K  kexin
 fdv303n.pdf

SMD Type MOSFET N-Channel MOSFET FDV303N (KDV303N) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 25V ID = 0.68 A 1 2 RDS(ON) 450m (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 600m (VGS = 2.7V) 1.9-0.1 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dra

 7.4. Size:1245K  kexin
 fdv303n-3.pdf

SMD Type MOSFET N-Channel MOSFET FDV303N (KDV303N) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 25V ID = 0.68 A 1 2 RDS(ON) 450m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 600m (VGS = 2.7V) 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 7.5. Size:546K  cn shikues
 fdv303n.pdf

FDV303N N-Channel Enhancement Mode MOSFET Feature 20V/2A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management SOT-23 Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=

 7.6. Size:2319K  cn vbsemi
 fdv303n.pdf

FDV303N www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C