August 1997 FDV303N Digital FET, N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These N-Channel enhancement mode field effect transistors areRDS(ON) = 0.45 @ VGS = 4.5 Vproduced using Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is tailored to minimizeRDS(ON) = 0.6 @ VGS= 2.7 V.on-state resistanc

August 1997 FDV303N Digital FET, N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These N-Channel enhancement mode field effect transistors areRDS(ON) = 0.45 @ VGS = 4.5 Vproduced using Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is tailored to minimizeRDS(ON) = 0.6 @ VGS= 2.7 V.on-state resistanc

SMD Type MOSFETN-Channel MOSFETFDV303N (KDV303N)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 25V ID = 0.68 A1 2 RDS(ON) 450m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 600m (VGS = 2.7V)1.9-0.11.GateD2.Source3.DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dra

SMD Type MOSFETN-Channel MOSFETFDV303N (KDV303N)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 25V ID = 0.68 A1 2 RDS(ON) 450m (VGS = 4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 600m (VGS = 2.7V)1.GateD2.Source3.DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

FDV303NN-Channel Enhancement Mode MOSFETFeature20V/2A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) .Reliable and Rugged. SOT-23 for Surface Mount Package. ApplicationsPower Management SOT-23Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=

FDV303Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C