FDV303NNB9U008
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDV303NNB9U008
Marking Code: 303
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.68
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8.5
nS
Cossⓘ -
Output Capacitance: 28
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
SOT-23
FDV303NNB9U008
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDV303NNB9U008
Datasheet (PDF)
7.1. Size:47K fairchild semi
fdv303n nb9u008.pdf 
August 1997 FDV303N Digital FET, N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These N-Channel enhancement mode field effect transistors areRDS(ON) = 0.45 @ VGS = 4.5 Vproduced using Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is tailored to minimizeRDS(ON) = 0.6 @ VGS= 2.7 V.on-state resistanc
7.2. Size:65K fairchild semi
fdv303n.pdf
August 1997 FDV303N Digital FET, N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These N-Channel enhancement mode field effect transistors areRDS(ON) = 0.45 @ VGS = 4.5 Vproduced using Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is tailored to minimizeRDS(ON) = 0.6 @ VGS= 2.7 V.on-state resistanc
7.3. Size:1238K kexin
fdv303n.pdf
SMD Type MOSFETN-Channel MOSFETFDV303N (KDV303N)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 25V ID = 0.68 A1 2 RDS(ON) 450m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 600m (VGS = 2.7V)1.9-0.11.GateD2.Source3.DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dra
7.4. Size:1245K kexin
fdv303n-3.pdf
SMD Type MOSFETN-Channel MOSFETFDV303N (KDV303N)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 25V ID = 0.68 A1 2 RDS(ON) 450m (VGS = 4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 600m (VGS = 2.7V)1.GateD2.Source3.DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
7.5. Size:546K cn shikues
fdv303n.pdf
FDV303NN-Channel Enhancement Mode MOSFETFeature20V/2A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) .Reliable and Rugged. SOT-23 for Surface Mount Package. ApplicationsPower Management SOT-23Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=
7.6. Size:2319K cn vbsemi
fdv303n.pdf
FDV303Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C
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