FDW258P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDW258P
   Código: 258P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 61 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 1943 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TSSOP-8

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FDW258P Datasheet (PDF)

..1. Size:307K fairchild semi
fdw258p.pdf

July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V

9.1. Size:209K fairchild semi
fdw254pz.pdf

July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V

9.2. Size:159K fairchild semi
fdw254p.pdf

June 2008FDW254PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate version of Fairchild Semiconductors advancedRDS(ON) = 15 m @ VGS = 2.5 VPowerTrench process. It has been optimized for powerRDS(ON) = 21.5 m @ VGS = 1.8

9.3. Size:194K fairchild semi
fdw256p.pdf

July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave dri

9.4. Size:286K fairchild semi
fdw252p.pdf

July 2008FDW252PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is a rugged 8.8 A, 20 V. RDS(ON) = 0.0125 @ VGS = 4.5 Vgate version of Fairchild Semiconductors advanced RDS(ON) = 0.018 @ VGS = 2.5 VPowerTrench process. It has been optimized for powermanagement applications w

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