FDW258P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDW258P Datasheet (PDF)

..1. Size:307K fairchild semi
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July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V

9.1. Size:209K fairchild semi
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July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V

9.2. Size:159K fairchild semi
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June 2008FDW254PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate version of Fairchild Semiconductors advancedRDS(ON) = 15 m @ VGS = 2.5 VPowerTrench process. It has been optimized for powerRDS(ON) = 21.5 m @ VGS = 1.8

9.3. Size:194K fairchild semi
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July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave dri