All MOSFET. FDW258P Datasheet

 

FDW258P Datasheet and Replacement


   Type Designator: FDW258P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1943 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TSSOP-8
 

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FDW258P Datasheet (PDF)

 ..1. Size:307K  fairchild semi
fdw258p.pdf pdf_icon

FDW258P

July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V

 9.1. Size:209K  fairchild semi
fdw254pz.pdf pdf_icon

FDW258P

July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V

 9.2. Size:159K  fairchild semi
fdw254p.pdf pdf_icon

FDW258P

June 2008FDW254PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate version of Fairchild Semiconductors advancedRDS(ON) = 15 m @ VGS = 2.5 VPowerTrench process. It has been optimized for powerRDS(ON) = 21.5 m @ VGS = 1.8

 9.3. Size:194K  fairchild semi
fdw256p.pdf pdf_icon

FDW258P

July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave dri

Datasheet: FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P , FDW254PZ , FDW256P , IRF2807 , FDW262P , FDW264P , FDW6923 , FDZ201N , FDZ202P , FDZ204P , FDZ206P , FDZ208P .

History: CMLDM3737 | RFM5P12 | RJK0653DPB

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