FDW258P MOSFET Datasheet: P-Ch, 12V, 9A. Full specification with pinout and replacement list

FDW258P Specs and Replacement

   Type Designator: FDW258P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1943 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TSSOP-8

FDW258P substitution

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FDW258P datasheet

..1. Size:307K fairchild semi
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July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V... See More ⇒

9.1. Size:209K fairchild semi
fdw254pz.pdf pdf_icon

July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V... See More ⇒

9.2. Size:159K fairchild semi
fdw254p.pdf pdf_icon

June 2008 FDW254P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 ... See More ⇒

9.3. Size:194K fairchild semi
fdw256p.pdf pdf_icon

July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave dri... See More ⇒