Справочник MOSFET. FDW258P

 

FDW258P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDW258P
   Маркировка: 258P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 1943 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TSSOP-8

 Аналог (замена) для FDW258P

 

 

FDW258P Datasheet (PDF)

 ..1. Size:307K  fairchild semi
 fdw258p.pdf

FDW258P FDW258P

July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V

 9.1. Size:209K  fairchild semi
 fdw254pz.pdf

FDW258P FDW258P

July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V

 9.2. Size:159K  fairchild semi
 fdw254p.pdf

FDW258P FDW258P

June 2008FDW254PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate version of Fairchild Semiconductors advancedRDS(ON) = 15 m @ VGS = 2.5 VPowerTrench process. It has been optimized for powerRDS(ON) = 21.5 m @ VGS = 1.8

 9.3. Size:194K  fairchild semi
 fdw256p.pdf

FDW258P FDW258P

July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave dri

 9.4. Size:286K  fairchild semi
 fdw252p.pdf

FDW258P FDW258P

July 2008FDW252PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is a rugged 8.8 A, 20 V. RDS(ON) = 0.0125 @ VGS = 4.5 Vgate version of Fairchild Semiconductors advanced RDS(ON) = 0.018 @ VGS = 2.5 VPowerTrench process. It has been optimized for powermanagement applications w

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