IRFR024N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR024N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 38 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 13.3 nC

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: TO252AA

Búsqueda de reemplazo de MOSFET IRFR024N

IRFR024N Datasheet (PDF)

1.1. irfr024npbf.pdf Size:400K _upd

PD - 95066A IRFR024NPbF IRFU024NPbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform

1.2. irfr024n.pdf Size:178K _international_rectifier

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET� Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on

3.1. irfr024pbf.pdf Size:1050K _upd

IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • Surface Mount (IRFR024, SiHFR024) RDS(on) ()VGS = 10 V 0.10 • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11 • Simple Driv

3.2. irfr024pbf irfu024pbf.pdf Size:1456K _international_rectifier

PD- 95236A IRFR024PbF IRFU024PbF � Lead-Free Absolute Maximum Ratings 12/03/04 Document Number: 91264 www.vishay.com 1 IRFR/U024PbF Document Number: 91264 www.vishay.com 2 IRFR/U024PbF Document Number: 91264 www.vishay.com 3 IRFR/U024PbF Document Number: 91264 www.vishay.com 4 IRFR/U024PbF Document Number: 91264 www.vishay.com 5 IRFR/U024PbF Document Number: 91264 www.vis

3.3. irfr024.pdf Size:172K _international_rectifier

3.4. irfr024a.pdf Size:495K _samsung

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07? Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area �A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

3.5. irfr024 irfu024 sihfr024 sihfu024.pdf Size:1159K _vishay

IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition � Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.10 � Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 � Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 � Available in Tape and Reel � Fast Switching Qgd (nC) 11 � Ease of Parall

Otros transistores... IRFR012 , IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRF540N , IRFR025 , IRFR110 , IRFR110A , IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N .

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