IRFR024N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR024N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de IRFR024N MOSFET
IRFR024N Datasheet (PDF)
irfr024n.pdf

PD- 9.1336AIRFR/U024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process TechnologyRDS(on) = 0.075G Fast Switching Fully Avalanche RatedID = 17A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi
irfr024npbf irfu024npbf.pdf

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform
irfr024n.pdf

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
irfr024npbf.pdf

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRFR024NPBFFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)@V =10VDS(on) GSHigh density cell design for ultra low RdsonFully characterized avalanche voltage and currentMinimum Lot-to-Lot variations for robust deviceperform
Otros transistores... IRFR012 , IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRF640 , IRFR025 , IRFR110 , IRFR110A , IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N .



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