All MOSFET. IRFR024N Datasheet

 

IRFR024N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR024N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO252AA

IRFR024N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR024N Datasheet (PDF)

0.1. irfr024n.pdf Size:178K _international_rectifier

IRFR024N
IRFR024N

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075Ω G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

0.2. irfr024npbf irfu024npbf.pdf Size:400K _international_rectifier

IRFR024N
IRFR024N

PD - 95066A IRFR024NPbF IRFU024NPbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform

 0.3. irfr024npbf.pdf Size:240K _inchange_semiconductor

IRFR024N
IRFR024N

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF ·FEATURES ·Drain Current I =17A@ T =25℃ D C ·Drain Source Voltage- : V = 55V(Min) DSS ·Static Drain-Source On-Resistance : R =75mΩ(Max)@V =10V DS(on) GS ·High density cell design for ultra low Rdson ·Fully characterized avalanche voltage and current ·Minimum Lot-to-Lot variations for robust device perform

0.4. irfr024n.pdf Size:241K _inchange_semiconductor

IRFR024N
IRFR024N

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top