IRFR024N Datasheet. Specs and Replacement

Type Designator: IRFR024N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO252

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IRFR024N datasheet

 ..1. Size:178K  international rectifier
irfr024n.pdf pdf_icon

IRFR024N

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi... See More ⇒

 ..2. Size:400K  international rectifier
irfr024npbf irfu024npbf.pdf pdf_icon

IRFR024N

PD - 95066A IRFR024NPbF IRFU024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform... See More ⇒

 ..3. Size:241K  inchange semiconductor
irfr024n.pdf pdf_icon

IRFR024N

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-... See More ⇒

 ..4. Size:240K  inchange semiconductor
irfr024npbf.pdf pdf_icon

IRFR024N

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R =75m (Max)@V =10V DS(on) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Minimum Lot-to-Lot variations for robust device perform... See More ⇒

Detailed specifications: IRFR012, IRFR014, IRFR014A, IRFR015, IRFR020, IRFR022, IRFR024, IRFR024A, 50N06, IRFR025, IRFR110, IRFR110A, IRFR111, IRFR120, IRFR1205, IRFR120A, IRFR120N

Keywords - IRFR024N MOSFET specs

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