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IRFR111 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR111

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 80 V

Corriente continua de drenaje (Id): 4.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.54 Ohm

Empaquetado / Estuche: DPAK

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IRFR111 Datasheet (PDF)

1.1. irfr111 irfu111.pdf Size:282K _samsung

IRFR111
IRFR111



4.1. irfr110a irfu110a.pdf Size:255K _fairchild_semi

IRFR111
IRFR111

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxim

4.2. irfr110pbf irfu110pbf.pdf Size:1868K _international_rectifier

IRFR111
IRFR111

PD - 95026A IRFR110PbF IRFU110PbF • Lead-Free 12/14/04 Document Number: 91265 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4 IRFR/U110PbF Document Number: 91265 www.vishay.com 5 IRFR/U110PbF Document Number: 91265 www.vishay.com 6 IRFR/U1

 4.3. irfr110.pdf Size:172K _international_rectifier

IRFR111
IRFR111



4.4. irfr110a.pdf Size:496K _samsung

IRFR111
IRFR111

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 4.5. irfr110 sihfr110.pdf Size:1455K _vishay

IRFR111
IRFR111

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

4.6. irfr110pbf sihfr110.pdf Size:1479K _vishay

IRFR111
IRFR111

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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