IRFR111 Spec and Replacement
Type Designator: IRFR111
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 4.7
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 67
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54
Ohm
Package:
TO252
IRFR111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR111 Specs
8.3. Size:1868K international rectifier
irfr110pbf irfu110pbf.pdf 
PD - 95026A IRFR110PbF IRFU110PbF Lead-Free 12/14/04 Document Number 91265 www.vishay.com 1 IRFR/U110PbF Document Number 91265 www.vishay.com 2 IRFR/U110PbF Document Number 91265 www.vishay.com 3 IRFR/U110PbF Document Number 91265 www.vishay.com 4 IRFR/U110PbF Document Number 91265 www.vishay.com 5 IRFR/U110PbF Document Number 91265 www.vishay.com 6 IRFR/U1... See More ⇒
8.4. Size:255K fairchild semi
irfr110a irfu110a.pdf
IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxim... See More ⇒
8.5. Size:496K samsung
irfr110a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒
8.6. Size:1455K vishay
irfr110 sihfr110.pdf
IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single ... See More ⇒
8.7. Size:1479K vishay
irfr110pbf sihfr110.pdf
IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single ... See More ⇒
8.8. Size:862K cn vbsemi
irfr110tr.pdf
IRFR110TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: IRFR020
, IRFR022
, IRFR024
, IRFR024A
, IRFR024N
, IRFR025
, IRFR110
, IRFR110A
, IRLZ44N
, IRFR120
, IRFR1205
, IRFR120A
, IRFR120N
, IRFR121
, IRFR130A
, IRFR1N60A
, IRFR210
.
History: IXFR26N100P
Keywords - IRFR111 MOSFET specs
IRFR111 cross reference
IRFR111 equivalent finder
IRFR111 lookup
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IRFR111 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
