All MOSFET. IRFR111 Datasheet

 

IRFR111 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR111

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Drain Current |Id|: 4.7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm

Package: DPAK

IRFR111 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR111 Datasheet (PDF)

1.1. irfr111 irfu111.pdf Size:282K _samsung

IRFR111 IRFR111



4.1. irfr110pbf.pdf Size:1479K _upd

IRFR111 IRFR111

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

4.2. irfr110a irfu110a.pdf Size:255K _fairchild_semi

IRFR111 IRFR111

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratin

 4.3. irfr110pbf irfu110pbf.pdf Size:1868K _international_rectifier

IRFR111 IRFR111

PD - 95026A IRFR110PbF IRFU110PbF • Lead-Free 12/14/04 Document Number: 91265 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4 IRFR/U110PbF Document Number: 91265 www.vishay.com 5 IRFR/U110PbF Document Number: 91265 www.vishay.com 6 IRFR/U110PbF

4.4. irfr110.pdf Size:172K _international_rectifier

IRFR111 IRFR111

 4.5. irfr110a.pdf Size:496K _samsung

IRFR111 IRFR111

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

4.6. irfr110 sihfr110.pdf Size:1455K _vishay

IRFR111 IRFR111

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single • Ease of Parall

Datasheet: IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRFR024N , IRFR025 , IRFR110 , IRFR110A , IRFZ46N , IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 .

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