IRFPE22 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPE22
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Id|ⓘ - Corriente continua
de drenaje: 2 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm
Encapsulados: TO-247AC
Búsqueda de reemplazo de IRFPE22 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFPE22 datasheet
9.2. Size:871K international rectifier
irfpe40.pdf 
PD - 94890 IRFPE40PbF Lead-Free 12/15/03 Document Number 91247 www.vishay.com 1 IRFPE40PbF Document Number 91247 www.vishay.com 2 IRFPE40PbF Document Number 91247 www.vishay.com 3 IRFPE40PbF Document Number 91247 www.vishay.com 4 IRFPE40PbF Document Number 91247 www.vishay.com 5 IRFPE40PbF Document Number 91247 www.vishay.com 6 IRFPE40PbF TO-247AC Package O
9.3. Size:852K international rectifier
irfpe50.pdf
PD - 94845 IRFPE50PbF Lead-Free 11/14/03 Document Number 91248 www.vishay.com 1 IRFPE50PbF Document Number 91248 www.vishay.com 2 IRFPE50PbF Document Number 91248 www.vishay.com 3 IRFPE50PbF Document Number 91248 www.vishay.com 4 IRFPE50PbF Document Number 91248 www.vishay.com 5 IRFPE50PbF Document Number 91248 www.vishay.com 6 IRFPE50PbF TO-247AC Package O
9.4. Size:1575K vishay
irfpe50pbf.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.5. Size:1518K vishay
irfpe30pbf.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Lead (P
9.6. Size:1610K vishay
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.7. Size:1520K vishay
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian
9.8. Size:1490K vishay
irfpe40pbf.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Lea
9.9. Size:830K vishay
irfpe40.pdf
IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 800 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 2.0 Isolated central mounting hole Qg (Max.) (nC) 130 Fast switching Qgs (nC) 17 Qgd (nC) 72 Ease of paralleling Configuration Single Simple drive requirements D Material categorization fo
9.10. Size:1525K vishay
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia
9.11. Size:1615K infineon
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.12. Size:1525K infineon
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian
9.13. Size:1530K infineon
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia
9.14. Size:252K inchange semiconductor
irfpe40.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFPE40 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
Otros transistores... IRFPC42, IRFPC42R, IRFPC50APBF, IRFPC50LCPBF, IRFPC50PBF, IRFPC60LCPBF, IRFPC60PBF, IRFPE20, AON6414A, IRFPE30PBF, IRFPE32, IRFPE40PBF, IRFPE42, IRFPE50PBF, IRFPE52, IRFPF20, IRFPF22
