IRFPE22 Datasheet and Replacement
Type Designator: IRFPE22
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Id| ⓘ - Maximum Drain Current: 2
A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.8
Ohm
Package:
TO-247AC
-
MOSFET ⓘ Cross-Reference Search
IRFPE22 Datasheet (PDF)
9.2. Size:871K international rectifier
irfpe40.pdf 
PD - 94890IRFPE40PbF Lead-Free12/15/03Document Number: 91247 www.vishay.com1IRFPE40PbFDocument Number: 91247 www.vishay.com2IRFPE40PbFDocument Number: 91247 www.vishay.com3IRFPE40PbFDocument Number: 91247 www.vishay.com4IRFPE40PbFDocument Number: 91247 www.vishay.com5IRFPE40PbFDocument Number: 91247 www.vishay.com6IRFPE40PbFTO-247AC Package O
9.3. Size:852K international rectifier
irfpe50.pdf
PD - 94845IRFPE50PbF Lead-Free11/14/03Document Number: 91248 www.vishay.com1IRFPE50PbFDocument Number: 91248 www.vishay.com2IRFPE50PbFDocument Number: 91248 www.vishay.com3IRFPE50PbFDocument Number: 91248 www.vishay.com4IRFPE50PbFDocument Number: 91248 www.vishay.com5IRFPE50PbFDocument Number: 91248 www.vishay.com6IRFPE50PbFTO-247AC Package O
9.4. Size:1575K vishay
irfpe50pbf.pdf
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
9.5. Size:1518K vishay
irfpe30pbf.pdf
IRFPE30, SiHFPE30Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Lead (P
9.6. Size:1610K vishay
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
9.7. Size:1520K vishay
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Complian
9.8. Size:1490K vishay
irfpe40pbf.pdf
IRFPE40, SiHFPE40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Lea
9.9. Size:830K vishay
irfpe40.pdf
IRFPE40www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 800 Repetitive avalanche ratedRDS(on) ()VGS = 10 V 2.0 Isolated central mounting holeQg (Max.) (nC) 130 Fast switchingQgs (nC) 17Qgd (nC) 72 Ease of parallelingConfiguration Single Simple drive requirementsD Material categorization: fo
9.10. Size:1525K vishay
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Complia
9.11. Size:1615K infineon
irfpe50 sihfpe50.pdf
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
9.12. Size:1525K infineon
irfpe30 sihfpe30.pdf
IRFPE30, SiHFPE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Complian
9.13. Size:1530K infineon
irfpe40 sihfpe40.pdf
IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Complia
9.14. Size:252K inchange semiconductor
irfpe40.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFPE40FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Datasheet: IRFPC42
, IRFPC42R
, IRFPC50APBF
, IRFPC50LCPBF
, IRFPC50PBF
, IRFPC60LCPBF
, IRFPC60PBF
, IRFPE20
, IRFB4110
, IRFPE30PBF
, IRFPE32
, IRFPE40PBF
, IRFPE42
, IRFPE50PBF
, IRFPE52
, IRFPF20
, IRFPF22
.
History: MS60P02NE
| STL65DN3LLH5
Keywords - IRFPE22 MOSFET datasheet
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