IRFPE22
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFPE22
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 74
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 2
A
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7.8
Ohm
Тип корпуса:
TO-247AC
Аналог (замена) для IRFPE22
-
подбор ⓘ MOSFET транзистора по параметрам
IRFPE22
Datasheet (PDF)
9.2. Size:871K international rectifier
irfpe40.pdf 
PD - 94890IRFPE40PbF Lead-Free12/15/03Document Number: 91247 www.vishay.com1IRFPE40PbFDocument Number: 91247 www.vishay.com2IRFPE40PbFDocument Number: 91247 www.vishay.com3IRFPE40PbFDocument Number: 91247 www.vishay.com4IRFPE40PbFDocument Number: 91247 www.vishay.com5IRFPE40PbFDocument Number: 91247 www.vishay.com6IRFPE40PbFTO-247AC Package O
9.3. Size:852K international rectifier
irfpe50.pdf 
PD - 94845IRFPE50PbF Lead-Free11/14/03Document Number: 91248 www.vishay.com1IRFPE50PbFDocument Number: 91248 www.vishay.com2IRFPE50PbFDocument Number: 91248 www.vishay.com3IRFPE50PbFDocument Number: 91248 www.vishay.com4IRFPE50PbFDocument Number: 91248 www.vishay.com5IRFPE50PbFDocument Number: 91248 www.vishay.com6IRFPE50PbFTO-247AC Package O
9.4. Size:1575K vishay
irfpe50pbf.pdf 
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
9.5. Size:1518K vishay
irfpe30pbf.pdf 
IRFPE30, SiHFPE30Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Lead (P
9.6. Size:1610K vishay
irfpe50 sihfpe50.pdf 
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
9.7. Size:1520K vishay
irfpe30 sihfpe30.pdf 
IRFPE30, SiHFPE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Complian
9.8. Size:1490K vishay
irfpe40pbf.pdf 
IRFPE40, SiHFPE40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Lea
9.9. Size:830K vishay
irfpe40.pdf 
IRFPE40www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 800 Repetitive avalanche ratedRDS(on) ()VGS = 10 V 2.0 Isolated central mounting holeQg (Max.) (nC) 130 Fast switchingQgs (nC) 17Qgd (nC) 72 Ease of parallelingConfiguration Single Simple drive requirementsD Material categorization: fo
9.10. Size:1525K vishay
irfpe40 sihfpe40.pdf 
IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Complia
9.11. Size:1615K infineon
irfpe50 sihfpe50.pdf 
IRFPE50, SiHFPE50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
9.12. Size:1525K infineon
irfpe30 sihfpe30.pdf 
IRFPE30, SiHFPE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 9.6 Ease of ParallelingQgd (nC) 45 Simple Drive RequirementsConfiguration Single Complian
9.13. Size:1530K infineon
irfpe40 sihfpe40.pdf 
IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Complia
9.14. Size:252K inchange semiconductor
irfpe40.pdf 
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFPE40FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Другие MOSFET... IRFPC42
, IRFPC42R
, IRFPC50APBF
, IRFPC50LCPBF
, IRFPC50PBF
, IRFPC60LCPBF
, IRFPC60PBF
, IRFPE20
, IRFB4110
, IRFPE30PBF
, IRFPE32
, IRFPE40PBF
, IRFPE42
, IRFPE50PBF
, IRFPE52
, IRFPF20
, IRFPF22
.
History: STT3599C
| SIS430DN
| FQPF16N25
