IRFPS3810PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS3810PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 580 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 170 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 5 V

Qgⓘ - Carga de la puerta: 260 nC

trⓘ - Tiempo de subida: 270 nS

Cossⓘ - Capacitancia de salida: 2470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-274AA

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IRFPS3810PBF datasheet

 ..1. Size:173K  international rectifier
 irfps3810pbf.pdf pdf_icon

IRFPS3810PBF

PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 170A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

 5.1. Size:115K  international rectifier
 irfps3810.pdf pdf_icon

IRFPS3810PBF

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

 6.1. Size:101K  international rectifier
 irfps3815.pdf pdf_icon

IRFPS3810PBF

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 6.2. Size:131K  international rectifier
 irfps3815pbf.pdf pdf_icon

IRFPS3810PBF

PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.015 l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

MOSTRAR MÁS

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