All MOSFET. IRFPS3810PBF Datasheet

 

IRFPS3810PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFPS3810PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 580 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 170 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 390 nC

Rise Time (tr): 270 nS

Drain-Source Capacitance (Cd): 2470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO-274AA

IRFPS3810PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFPS3810PBF Datasheet (PDF)

1.1. irfps3810pbf.pdf Size:173K _upd-mosfet

IRFPS3810PBF
IRFPS3810PBF

PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.009Ω l Fast Switching G l Fully Avalanche Rated ID = 170A† l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

1.2. irfps3810.pdf Size:115K _international_rectifier

IRFPS3810PBF
IRFPS3810PBF

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.009? Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 2.1. irfps3815pbf.pdf Size:131K _upd-mosfet

IRFPS3810PBF
IRFPS3810PBF

PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.015Ω l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

2.2. irfps3815.pdf Size:101K _international_rectifier

IRFPS3810PBF
IRFPS3810PBF

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.015? Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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