All MOSFET. IRFPS3810PBF Datasheet

 

IRFPS3810PBF Datasheet and Replacement


   Type Designator: IRFPS3810PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 580 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 2470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-274AA
 

 IRFPS3810PBF substitution

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IRFPS3810PBF Datasheet (PDF)

 ..1. Size:173K  international rectifier
 irfps3810pbf.pdf pdf_icon

IRFPS3810PBF

PD - 95703IRFPS3810PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 170Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve e

 5.1. Size:115K  international rectifier
 irfps3810.pdf pdf_icon

IRFPS3810PBF

PD - 93912BIRFPS3810HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 170A SDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extremely low on-resista

 6.1. Size:101K  international rectifier
 irfps3815.pdf pdf_icon

IRFPS3810PBF

PD - 93911IRFPS3815HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.015 Fast SwitchingG Fully Avalanche RatedID = 105ASDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extremely low on-resistanc

 6.2. Size:131K  international rectifier
 irfps3815pbf.pdf pdf_icon

IRFPS3810PBF

PD - 95896IRFPS3815PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.015l Fast SwitchingGl Fully Avalanche RatedID = 105Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extr

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Datasheet: IRFPG40PBF , IRFPG42 , IRFPG50PBF , IRFPG52 , IRFPS29N60LPBF , IRFPS30N60KPBF , IRFPS35N50LPBF , IRFPS37N50APBF , 4435 , IRFPS3815PBF , IRFPS38N60L , IRFPS38N60LPBF , IRFPS40N50L , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF , IRFPS43N50K .

History: ME2305-G | KI5473DC | MSU7N60T | NCEP25N10AQ | KI5447DC | SFF80N20NUB | WMK12N105C2

Keywords - IRFPS3810PBF MOSFET datasheet

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