IRFPS40N50L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPS40N50L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 540 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO-274AA
Búsqueda de reemplazo de IRFPS40N50L MOSFET
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IRFPS40N50L datasheet
irfps40n50lpbf.pdf
PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 170ns 46A 0.087 Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications
irfps40n50l.pdf
PD- 93923B SMPS MOSFET IRFPS40N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.087 46A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Character
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps40n50l sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
Otros transistores... IRFPS29N60LPBF, IRFPS30N60KPBF, IRFPS35N50LPBF, IRFPS37N50APBF, IRFPS3810PBF, IRFPS3815PBF, IRFPS38N60L, IRFPS38N60LPBF, IRF530, IRFPS40N50LPBF, IRFPS40N60K, IRFPS40N60KPBF, IRFPS43N50K, IRFPS43N50KPBF, IRFRC20PBF, IRFR15N20DPBF, IRFR18N15DPBF
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