IRFPS40N50L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPS40N50L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 540 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 960 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO-274AA
Búsqueda de reemplazo de IRFPS40N50L MOSFET
IRFPS40N50L Datasheet (PDF)
irfps40n50lpbf.pdf

PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications
irfps40n50l.pdf

PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps40n50l sihfps40n50l.pdf

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
Otros transistores... IRFPS29N60LPBF , IRFPS30N60KPBF , IRFPS35N50LPBF , IRFPS37N50APBF , IRFPS3810PBF , IRFPS3815PBF , IRFPS38N60L , IRFPS38N60LPBF , AO4407 , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF , IRFPS43N50K , IRFPS43N50KPBF , IRFRC20PBF , IRFR15N20DPBF , IRFR18N15DPBF .
History: IRF721FI | JFPC13N50C
History: IRF721FI | JFPC13N50C



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent | 2n5401 transistor datasheet