IRFPS40N50L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFPS40N50L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 540 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 380 nC
trⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 960 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO-274AA
Аналог (замена) для IRFPS40N50L
IRFPS40N50L Datasheet (PDF)
irfps40n50lpbf.pdf
PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications
irfps40n50l.pdf
PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps40n50l sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps40n50lpbf.pdf
"IRFPS40N50LPBF"PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for ext
irfps40n60kpbf.pdf
PD - 95702SMPS MOSFETIRFPS40N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)600V 0.110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/
irfps40n60k.pdf
PD - 94384SMPS MOSFETIRFPS40N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS)600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt RuggednessSUPER TO-
irfps40n60k sihfps40n60k.pdf
IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf
IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918