IRFPS40N50L
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFPS40N50L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 540
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 46
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 380
nC
trⓘ - Rise Time: 170
nS
Cossⓘ -
Output Capacitance: 960
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package: TO-274AA
IRFPS40N50L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFPS40N50L
Datasheet (PDF)
..1. Size:173K international rectifier
irfps40n50lpbf.pdf 
PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications
..2. Size:111K international rectifier
irfps40n50l.pdf
PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character
..3. Size:187K vishay
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
..4. Size:185K vishay
irfps40n50l sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
..5. Size:150K vishay
irfps40n50lpbf.pdf
"IRFPS40N50LPBF"PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for ext
6.1. Size:196K international rectifier
irfps40n60kpbf.pdf
PD - 95702SMPS MOSFETIRFPS40N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)600V 0.110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/
6.2. Size:107K international rectifier
irfps40n60k.pdf
PD - 94384SMPS MOSFETIRFPS40N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS)600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt RuggednessSUPER TO-
6.3. Size:178K vishay
irfps40n60k sihfps40n60k.pdf
IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current
6.4. Size:180K vishay
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf
IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current
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