All MOSFET. IRFPS40N50L Datasheet

 

IRFPS40N50L Datasheet and Replacement


   Type Designator: IRFPS40N50L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-274AA
 

 IRFPS40N50L substitution

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IRFPS40N50L Datasheet (PDF)

 ..1. Size:173K  international rectifier
irfps40n50lpbf.pdf pdf_icon

IRFPS40N50L

PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications

 ..2. Size:111K  international rectifier
irfps40n50l.pdf pdf_icon

IRFPS40N50L

PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character

 ..3. Size:187K  vishay
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf pdf_icon

IRFPS40N50L

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 ..4. Size:185K  vishay
irfps40n50l sihfps40n50l.pdf pdf_icon

IRFPS40N50L

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

Datasheet: IRFPS29N60LPBF , IRFPS30N60KPBF , IRFPS35N50LPBF , IRFPS37N50APBF , IRFPS3810PBF , IRFPS3815PBF , IRFPS38N60L , IRFPS38N60LPBF , AO4407 , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF , IRFPS43N50K , IRFPS43N50KPBF , IRFRC20PBF , IRFR15N20DPBF , IRFR18N15DPBF .

History: IXFA36N20X3 | ME04N25G

Keywords - IRFPS40N50L MOSFET datasheet

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