IRFR2307ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR2307ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 50 nC

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-252

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IRFR2307ZPBF datasheet

 ..1. Size:352K  international rectifier
 irfr2307zpbf irfu2307zpbf.pdf pdf_icon

IRFR2307ZPBF

PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi

 5.1. Size:298K  international rectifier
 auirfr2307ztr.pdf pdf_icon

IRFR2307ZPBF

PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Qualified * Desc

 5.2. Size:678K  infineon
 auirfr2307z.pdf pdf_icon

IRFR2307ZPBF

AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri

 5.3. Size:1484K  cn vbsemi
 irfr2307ztr.pdf pdf_icon

IRFR2307ZPBF

IRFR2307ZTR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth

MOSTRAR MÁS

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