IRFR2307ZPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR2307ZPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-252
IRFR2307ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR2307ZPBF Datasheet (PDF)
irfr2307zpbf irfu2307zpbf.pdf
PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi
irfr2307zpbf irfu2307zpbf.pdf
PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi
auirfr2307ztr.pdf
PD - 97546AUTOMOTIVE GRADEAUIRFR2307ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS 75V 175C Operating TemperatureRDS(on) max.16m Fast Switching Repetitive Avalanche Allowed up to Tjmax GID (Silicon Limited) 53A Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *Desc
auirfr2307z.pdf
AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri
irfr2307ztr.pdf
IRFR2307ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth
irfr2307z.pdf
isc N-Channel MOSFET Transistor IRFR2307Z, IIRFR2307ZFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: APT10030L2VFR | PJW4N06A | PK632BA
History: APT10030L2VFR | PJW4N06A | PK632BA
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