IRFR2405PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR2405PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 470 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO-252
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IRFR2405PBF Datasheet (PDF)
irfr2405pbf irfu2405pbf.pdf

PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing
auirfr2405.pdf

PD - 97688AAUTOMOTIVE GRADEAUIRFR2405Features HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSS55V Dynamic dV/dT RatingRDS(on) typ.l Low On-Resistance 11.8ml 175C Operating Temperaturemax 16mGl Fast SwitchingID (Silicon Limited)56Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)30Aup to Tjmaxl Lead-Free, R
irfr2405.pdf

PD - 93861IRFR2405IRFU2405HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405)D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.016G Fully Avalanche RatedDescriptionID = 56A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extreme
irfr2405.pdf

isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405FEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 V
Otros transistores... IRFR210PBF , IRFR214PBF , IRFR220BTMFP001 , IRFR220NPBF , IRFR220PBF , IRFR224PBF , IRFR2307ZPBF , IRFR230BTMAM002 , 75N75 , IRFR2407PBF , IRFR24N15DPBF , IRFR2905ZPBF , ZVN0545ASTOB , ZVN0545ASTZ , ZVN0545GTA , ZVN0545GTC , ZVN2106ASTOA .
History: IRFAC42 | FDB86366-F085 | SSP60R070S2E | SSB65R090S2 | IRL3715Z | IRLZ44S | RU30S15H
History: IRFAC42 | FDB86366-F085 | SSP60R070S2E | SSB65R090S2 | IRL3715Z | IRLZ44S | RU30S15H



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