IRFR2405PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR2405PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 70 nC

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-252

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IRFR2405PBF datasheet

 ..1. Size:221K  international rectifier
 irfr2405pbf irfu2405pbf.pdf pdf_icon

IRFR2405PBF

PD - 95369A IRFR2405PbF IRFU2405PbF l Surface Mount (IRFR2405) HEXFET Power MOSFET l Straight Lead (IRFU2405) l Advanced Process Technology D VDSS = 55V l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated RDS(on) = 0.016 G l Lead-Free Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing

 6.1. Size:204K  international rectifier
 auirfr2405.pdf pdf_icon

IRFR2405PBF

PD - 97688A AUTOMOTIVE GRADE AUIRFR2405 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS 55V Dynamic dV/dT Rating RDS(on) typ. l Low On-Resistance 11.8m l 175 C Operating Temperature max 16m G l Fast Switching ID (Silicon Limited) 56A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 30A up to Tjmax l Lead-Free, R

 6.2. Size:129K  international rectifier
 irfr2405.pdf pdf_icon

IRFR2405PBF

PD - 93861 IRFR2405 IRFU2405 HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405) D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.016 G Fully Avalanche Rated Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extreme

 6.3. Size:241K  inchange semiconductor
 irfr2405.pdf pdf_icon

IRFR2405PBF

isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405 FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V

MOSTRAR MÁS

Otros transistores... IRFR210PBF, IRFR214PBF, IRFR220BTMFP001, IRFR220NPBF, IRFR220PBF, IRFR224PBF, IRFR2307ZPBF, IRFR230BTMAM002, 18N50, IRFR2407PBF, IRFR24N15DPBF, IRFR2905ZPBF, ZVN0545ASTOB, ZVN0545ASTZ, ZVN0545GTA, ZVN0545GTC, ZVN2106ASTOA