IRFR2405PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR2405PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-252
IRFR2405PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR2405PBF Datasheet (PDF)
irfr2405pbf irfu2405pbf.pdf
PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing
irfr2405pbf irfu2405pbf.pdf
PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing
auirfr2405.pdf
PD - 97688AAUTOMOTIVE GRADEAUIRFR2405Features HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSS55V Dynamic dV/dT RatingRDS(on) typ.l Low On-Resistance 11.8ml 175C Operating Temperaturemax 16mGl Fast SwitchingID (Silicon Limited)56Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)30Aup to Tjmaxl Lead-Free, R
irfr2405.pdf
PD - 93861IRFR2405IRFU2405HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405)D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.016G Fully Avalanche RatedDescriptionID = 56A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extreme
irfr2405.pdf
isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405FEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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