IRFR130A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR130A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 41 W
Tensión drenaje-fuente (Vds): 100 V
Corriente continua de drenaje (Id): 13 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 610 pF
Resistencia drenaje-fuente RDS(on): 0.11 Ohm
Empaquetado / Estuche: DPAK
Búsqueda de reemplazo de MOSFET IRFR130A
IRFR130A Datasheet (PDF)
1.1. irfr130atm.pdf 
Size:259K _international_rectifier
IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Ω (Typ.) Lower RDS(ON) : 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum
1.2. irfr130a.pdf Size:504K _samsung
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C
4.1. irfr13n20dpbf irfu13n20dpbf.pdf Size:684K _international_rectifier
PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF • Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T
4.2. irfr13n15d.pdf Size:128K _international_rectifier
PD - 93905A IRFR13N15D SMPS MOSFET IRFU13N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.18Ω 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I
4.3. irfr13n15dpbf.pdf Size:222K _international_rectifier
PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
4.4. irfr13n20d.pdf Size:181K _international_rectifier
PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235Ω 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRF
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
