IRFR130A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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IRFR130A Datasheet (PDF)

1.1. irfr130atm.pdf Size:259K _international_rectifier

IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Ω (Typ.) Lower RDS(ON) : 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

1.2. irfr130a.pdf Size:504K _samsung

 Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

 4.1. irfr13n20dpbf irfu13n20dpbf.pdf Size:684K _international_rectifier

PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF • Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T

4.2. irfr13n15d.pdf Size:128K _international_rectifier

PD - 93905A IRFR13N15D SMPS MOSFET IRFU13N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.18Ω 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

 4.3. irfr13n15dpbf.pdf Size:222K _international_rectifier

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

4.4. irfr13n20d.pdf Size:181K _international_rectifier

PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235Ω 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRF

 4.5. irfr13n15d.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFR13N15D, IIRFR13N15D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤180mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

4.6. irfr13n20d.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤235mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

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