IRFR130A
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFR130A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 41
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 13
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 27
nC
trⓘ -
Время нарастания: 14
ns
Cossⓘ - Выходная емкость: 150
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11
Ohm
Тип корпуса:
TO252
- подбор MOSFET транзистора по параметрам
IRFR130A
Datasheet (PDF)
..2. Size:504K samsung
irfr130a.pdf 

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 2 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
0.1. Size:259K international rectifier
irfr130atm.pdf 

IRFR/U130AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V (Typ.) Lower RDS(ON) : 0.092 2112331. Gate 2. Drain 3. SourceAbsolute Maximum
0.2. Size:764K cn vbsemi
irfr130atm.pdf 

IRFR130ATMwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING
8.1. Size:128K international rectifier
irfr13n15d.pdf 

PD - 93905AIRFR13N15DSMPS MOSFET IRFU13N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.18 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI
8.2. Size:222K international rectifier
irfr13n15dpbf irfr13n15dpbf.pdf 

PD - 95549AIRFR13N15DPbF IRFU13N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.18 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa
8.3. Size:222K international rectifier
irfu13n15dpbf irfr13n15dpbf.pdf 

PD - 95549AIRFR13N15DPbF IRFU13N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.18 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa
8.4. Size:181K international rectifier
irfr13n20d.pdf 

PD- 93814AIRFR13N20DSMPS MOSFET IRFU13N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.235 13ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pak Fully Characterized Avalanche VoltageIRFR13N20D IRF
8.5. Size:684K international rectifier
irfr13n20dpbf irfu13n20dpbf.pdf 

PD-95354ASMPS MOSFETIRFR13N20DPbFIRFU13N20DPbF Lead-Freewww.irf.com 11/17/05IRFR/U13N20DPbF2 www.irf.comIRFR/U13N20DPbFwww.irf.com 3IRFR/U13N20DPbF4 www.irf.comIRFR/U13N20DPbFwww.irf.com 5IRFR/U13N20DPbF6 www.irf.comIRFR/U13N20DPbFwww.irf.com 7IRFR/U13N20DPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (T
8.6. Size:222K international rectifier
irfr13n15dpbf.pdf 

PD - 95549AIRFR13N15DPbF IRFU13N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.18 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa
8.7. Size:2455K cn vbsemi
irfr13n20dtr.pdf 

IRFR13N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA
8.8. Size:2559K cn vbsemi
irfr13n15dtr.pdf 

IRFR13N15DTRwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATION
8.9. Size:242K inchange semiconductor
irfr13n15d.pdf 

isc N-Channel MOSFET Transistor IRFR13N15D, IIRFR13N15DFEATURESStatic drain-source on-resistance:RDS(on)180mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
8.10. Size:242K inchange semiconductor
irfr13n20d.pdf 

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20DFEATURESStatic drain-source on-resistance:RDS(on)235mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRFR110
, IRFR110A
, IRFR111
, IRFR120
, IRFR1205
, IRFR120A
, IRFR120N
, IRFR121
, IRF630
, IRFR1N60A
, IRFR210
, IRFR210A
, IRFR212
, IRFR214
, IRFR214A
, IRFR220
, IRFR220A
.
History: IPB60R180C7
| IRF7316QPBF
| PN4302
| STN3N40K3
| KO3402
| AFC4516W
| 2SK2528-01