All MOSFET. IRFR130A Datasheet

 

IRFR130A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR130A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 610 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: DPAK

IRFR130A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR130A Datasheet (PDF)

1.1. irfr130atm.pdf Size:259K _upd

IRFR130A
IRFR130A

IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Ω (Typ.) Lower RDS(ON) : 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

1.2. irfr130atm.pdf Size:259K _international_rectifier

IRFR130A
IRFR130A

IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Ω (Typ.) Lower RDS(ON) : 0.092 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 1.3. irfr130a.pdf Size:504K _samsung

IRFR130A
IRFR130A

 Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

Datasheet: IRFR110 , IRFR110A , IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 , BUZ11 , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 , IRFR214 , IRFR214A , IRFR220 , IRFR220A .

 

 
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