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ZVP4525E6TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVP4525E6TA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.197 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.78 nS
   Cossⓘ - Capacitancia de salida: 12.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
   Paquete / Cubierta: SOT23-6

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ZVP4525E6TA Datasheet (PDF)

 ..1. Size:409K  diodes
 zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525E6TA

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 5.1. Size:411K  diodes
 zvp4525e6.pdf pdf_icon

ZVP4525E6TA

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525E6TA

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525E6TA

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

MOSTRAR MÁS

Otros transistores... ZVP4105ASTOB , ZVP4105ASTZ , ZVP4424ASTOA , ZVP4424ASTOB , ZVP4424ASTZ , ZVP4424GTA , ZVP4424GTC , ZVP4424ZTA , AOD4184A , ZVP4525E6TC , ZVP4525GTA , ZVP4525GTC , ZVP4525ZTA , ZXM41N10FTA , ZXM41N10FTC , ZXM61N02FTA , ZXM61N02FTC .

 

 
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