ZVP4525E6TA - аналоги и даташиты транзистора

 

ZVP4525E6TA - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZVP4525E6TA
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.197 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.78 ns
   Cossⓘ - Выходная емкость: 12.8 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
   Тип корпуса: SOT23-6

 Аналог (замена) для ZVP4525E6TA

 

ZVP4525E6TA Datasheet (PDF)

 ..1. Size:409K  diodes
 zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525E6TA

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 5.1. Size:411K  diodes
 zvp4525e6.pdf pdf_icon

ZVP4525E6TA

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525E6TA

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525E6TA

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

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History: ZXM61N02FTA | ZVP4525ZTA

 

 
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