All MOSFET. ZVP4525E6TA Datasheet

 

ZVP4525E6TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZVP4525E6TA
   Marking Code: P52
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.197 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.45 nC
   trⓘ - Rise Time: 3.78 nS
   Cossⓘ - Output Capacitance: 12.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT23-6

 ZVP4525E6TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZVP4525E6TA Datasheet (PDF)

 ..1. Size:409K  diodes
 zvp4525e6ta zvp4525e6tc.pdf

ZVP4525E6TA ZVP4525E6TA

ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 5.1. Size:411K  diodes
 zvp4525e6.pdf

ZVP4525E6TA ZVP4525E6TA

ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 7.1. Size:323K  diodes
 zvp4525g.pdf

ZVP4525E6TA ZVP4525E6TA

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf

ZVP4525E6TA ZVP4525E6TA

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.3. Size:137K  diodes
 zvp4525z.pdf

ZVP4525E6TA ZVP4525E6TA

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 7.4. Size:132K  diodes
 zvp4525zta.pdf

ZVP4525E6TA ZVP4525E6TA

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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