ZVP4525E6TA Datasheet: MOSFET, P-Ch, 250V, 0.197A. Full specification with pinout and replacement list

ZVP4525E6TA Datasheet. Specs and Replacement

Type Designator: ZVP4525E6TA 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.197 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.78 nS

Cossⓘ - Output Capacitance: 12.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm

Package: SOT23-6

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ZVP4525E6TA datasheet

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ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener... See More ⇒

5.1. Size:411K diodes
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ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v... See More ⇒

7.2. Size:321K diodes
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