ZXM64N02XTA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM64N02XTA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.6 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: MSOP8

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ZXM64N02XTA datasheet

 ..1. Size:161K  zetex
 zxm64n02xta.pdf pdf_icon

ZXM64N02XTA

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 4.1. Size:161K  zetex
 zxm64n02xtc.pdf pdf_icon

ZXM64N02XTA

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 5.1. Size:338K  diodes
 zxm64n02x.pdf pdf_icon

ZXM64N02XTA

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 7.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N02XTA

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

MOSTRAR MÁS

Otros transistores... ZXM61P03FTA, ZXM61P03FTC, ZXM62N02E6TA, ZXM62N03E6TA, ZXM62N03GTA, ZXM62P02E6TA, ZXM62P03E6TA, ZXM62P03GTA, IRFP260N, ZXM64N02XTC, ZXM64N035GTA, ZXM64N03XTA, ZXM64N03XTC, ZXM64P02XTA, ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA