ZXM64N02XTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM64N02XTA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.6 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: MSOP8
Búsqueda de reemplazo de ZXM64N02XTA MOSFET
ZXM64N02XTA Datasheet (PDF)
zxm64n02xta.pdf

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-
zxm64n02xtc.pdf

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-
zxm64n02x.pdf

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-
zxm64n035l3.pdf

ZXM64N035L335V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r
Otros transistores... ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , 10N60 , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA .
History: IRF7473 | SM2A02NSU | SLH60R080SS | SSM3J334R | R6509ENJ | STP141NF55
History: IRF7473 | SM2A02NSU | SLH60R080SS | SSM3J334R | R6509ENJ | STP141NF55



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