Справочник MOSFET. ZXM64N02XTA

 

ZXM64N02XTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXM64N02XTA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9.6 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: MSOP8

 Аналог (замена) для ZXM64N02XTA

 

 

ZXM64N02XTA Datasheet (PDF)

 ..1. Size:161K  zetex
zxm64n02xta.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 4.1. Size:161K  zetex
zxm64n02xtc.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 5.1. Size:338K  diodes
zxm64n02x.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-

 7.1. Size:65K  diodes
zxm64n035l3.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N035L335V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r

 7.2. Size:100K  zetex
zxm64n035gta.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N035G35V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.050 : ID = 6.7ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r

 7.3. Size:331K  zetex
zxm64n03xtc.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N03X30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.045 ID=5.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESMSOP8 Low on-resistance

 7.4. Size:331K  zetex
zxm64n03xta.pdf

ZXM64N02XTA
ZXM64N02XTA

ZXM64N03X30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.045 ID=5.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESMSOP8 Low on-resistance

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top