ZXM64N02XTA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXM64N02XTA
Marking Code: ZXM64N02
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7
V
|Id|ⓘ - Maximum Drain Current: 5.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 9.6
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
MSOP8
ZXM64N02XTA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXM64N02XTA
Datasheet (PDF)
..1. Size:161K zetex
zxm64n02xta.pdf 
ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-
4.1. Size:161K zetex
zxm64n02xtc.pdf
ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-
5.1. Size:338K diodes
zxm64n02x.pdf
ZXM64N02X20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.040; I =5.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-
7.1. Size:65K diodes
zxm64n035l3.pdf
ZXM64N035L335V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r
7.2. Size:100K zetex
zxm64n035gta.pdf
ZXM64N035G35V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 35V: RDS(on) = 0.050 : ID = 6.7ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on-r
7.3. Size:331K zetex
zxm64n03xtc.pdf
ZXM64N03X30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.045 ID=5.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESMSOP8 Low on-resistance
7.4. Size:331K zetex
zxm64n03xta.pdf
ZXM64N03X30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.045 ID=5.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESMSOP8 Low on-resistance
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