ZXM64P02XTC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM64P02XTC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.3 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: MSOP8

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ZXM64P02XTC datasheet

 ..1. Size:181K  zetex
 zxm64p02xtc.pdf pdf_icon

ZXM64P02XTC

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on

 4.1. Size:181K  zetex
 zxm64p02xta.pdf pdf_icon

ZXM64P02XTC

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on

 5.1. Size:328K  diodes
 zxm64p02x.pdf pdf_icon

ZXM64P02XTC

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on

 7.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P02XTC

ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V RDS(on) = 0.075 ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on

MOSTRAR MÁS

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