ZXM64P02XTC
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXM64P02XTC
Marking Code: ZXM64P02
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.9
nC
trⓘ - Rise Time: 12.3
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
MSOP8
ZXM64P02XTC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXM64P02XTC
Datasheet (PDF)
..1. Size:181K zetex
zxm64p02xtc.pdf 
ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on
4.1. Size:181K zetex
zxm64p02xta.pdf
ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on
5.1. Size:328K diodes
zxm64p02x.pdf
ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on
7.1. Size:106K diodes
zxm64p035l3.pdf
ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on
7.2. Size:333K diodes
zxm64p03x.pdf
ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP
7.3. Size:331K zetex
zxm64p03xta.pdf
ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP
7.4. Size:100K zetex
zxm64p035gta.pdf
ZXM64P035G35V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on
Datasheet: WPB4002
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