ZXM64P02XTC - Даташиты. Аналоги. Основные параметры
Наименование производителя: ZXM64P02XTC
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 12.3 ns
Cossⓘ - Выходная емкость: 350 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: MSOP8
Аналог (замена) для ZXM64P02XTC
ZXM64P02XTC Datasheet (PDF)
zxm64p02xtc.pdf
ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on
zxm64p02xta.pdf
ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on
zxm64p02x.pdf
ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on
zxm64p035l3.pdf
ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V RDS(on) = 0.075 ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on
Другие MOSFET... ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC , ZXM64P02XTA , IRFB4115 , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC , ZXM66P03N8TA , ZXMD63C02X .
History: IXFT52N50P2 | ZXM66N03N8TA
History: IXFT52N50P2 | ZXM66N03N8TA
Список транзисторов
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