ZXM66N02N8TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXM66N02N8TA Datasheet (PDF)

..1. Size:78K zetex
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ZXM66N02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY=20V; RDS(ON)=0.015 =9A(BR)DSS DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power SO8management applications.FEATURES Low on-resistance

7.1. Size:81K zetex
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ZXM66N03N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY=30V; RDS(ON)=0.015 =9A(BR)DSS DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power SO8management applications.FEATURES Low on-resistance

9.1. Size:610K diodes
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A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

9.2. Size:65K diodes
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ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc