ZXM66N02N8TA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM66N02N8TA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SO-8

  📄📄 Copiar 

 Búsqueda de reemplazo de ZXM66N02N8TA MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXM66N02N8TA datasheet

 ..1. Size:78K  zetex
 zxm66n02n8ta.pdf pdf_icon

ZXM66N02N8TA

 7.1. Size:81K  zetex
 zxm66n03n8ta.pdf pdf_icon

ZXM66N02N8TA

 9.1. Size:610K  diodes
 zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf pdf_icon

ZXM66N02N8TA

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

 9.2. Size:65K  diodes
 zxm66p03n8.pdf pdf_icon

ZXM66N02N8TA

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc

MOSTRAR MÁS

Otros transistores... ZXM64N02XTC, ZXM64N035GTA, ZXM64N03XTA, ZXM64N03XTC, ZXM64P02XTA, ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, 8205A, ZXM66N03N8TA, ZXM66P02N8TA, ZXM66P02N8TC, ZXM66P03N8TA, ZXMD63C02X, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC