ZXM66N02N8TA Datasheet. Specs and Replacement

Type Designator: ZXM66N02N8TA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SO-8

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ZXM66N02N8TA datasheet

 ..1. Size:78K  zetex
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ZXM66N02N8TA

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ZXM66N02N8TA

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 9.1. Size:610K  diodes
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ZXM66N02N8TA

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti... See More ⇒

 9.2. Size:65K  diodes
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ZXM66N02N8TA

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

Detailed specifications: ZXM64N02XTC, ZXM64N035GTA, ZXM64N03XTA, ZXM64N03XTC, ZXM64P02XTA, ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, 8205A, ZXM66N03N8TA, ZXM66P02N8TA, ZXM66P02N8TC, ZXM66P03N8TA, ZXMD63C02X, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.