Справочник MOSFET. ZXM66N02N8TA

 

ZXM66N02N8TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXM66N02N8TA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для ZXM66N02N8TA

 

 

ZXM66N02N8TA Datasheet (PDF)

 ..1. Size:78K  zetex
 zxm66n02n8ta.pdf

ZXM66N02N8TA ZXM66N02N8TA

ZXM66N02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY=20V; RDS(ON)=0.015 =9A(BR)DSS DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power SO8management applications.FEATURES Low on-resistance

 7.1. Size:81K  zetex
 zxm66n03n8ta.pdf

ZXM66N02N8TA ZXM66N02N8TA

ZXM66N03N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY=30V; RDS(ON)=0.015 =9A(BR)DSS DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power SO8management applications.FEATURES Low on-resistance

 9.1. Size:610K  diodes
 zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf

ZXM66N02N8TA ZXM66N02N8TA

A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

 9.2. Size:65K  diodes
 zxm66p03n8.pdf

ZXM66N02N8TA ZXM66N02N8TA

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 9.3. Size:64K  zetex
 zxm66p03n8ta.pdf

ZXM66N02N8TA ZXM66N02N8TA

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 9.4. Size:831K  cn vbsemi
 zxm66p03n8ta.pdf

ZXM66N02N8TA ZXM66N02N8TA

ZXM66P03N8TAwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6

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History: ZXMC3AMC

 

 
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