ZXMN0545G4TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN0545G4TA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.14 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Paquete / Cubierta: SOT-223
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ZXMN0545G4TA Datasheet (PDF)
zxmn0545g4ta.pdf
ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ
zxmn0545g4.pdf
ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ
Otros transistores... ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC , ZXM66P03N8TA , ZXMD63C02X , IRFP260 , ZXMN10A07FTA , ZXMN10A07FTC , ZXMN10A07ZTA , ZXMN10A08E6TA , ZXMN10A08E6TC , ZXMN10A09KTC , ZXMN10A11GTA , ZXMN10A11GTC .
History: 4N65G-TQ2-R | SQD50N03-09 | 4N65KL-TF2-T | IXKP24N60C5M
History: 4N65G-TQ2-R | SQD50N03-09 | 4N65KL-TF2-T | IXKP24N60C5M
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