ZXMN0545G4TA Datasheet. Specs and Replacement

Type Designator: ZXMN0545G4TA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.14 A

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: SOT-223

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ZXMN0545G4TA datasheet

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 zxmn0545g4ta.pdf pdf_icon

ZXMN0545G4TA

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ... See More ⇒

 4.1. Size:213K  diodes
 zxmn0545g4.pdf pdf_icon

ZXMN0545G4TA

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ... See More ⇒

Detailed specifications: ZXM64P035GTA, ZXM64P03XTA, ZXM66N02N8TA, ZXM66N03N8TA, ZXM66P02N8TA, ZXM66P02N8TC, ZXM66P03N8TA, ZXMD63C02X, 2SK3878, ZXMN10A07FTA, ZXMN10A07FTC, ZXMN10A07ZTA, ZXMN10A08E6TA, ZXMN10A08E6TC, ZXMN10A09KTC, ZXMN10A11GTA, ZXMN10A11GTC

Keywords - ZXMN0545G4TA MOSFET specs

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