All MOSFET. ZXMN0545G4TA Datasheet

 

ZXMN0545G4TA Datasheet and Replacement


   Type Designator: ZXMN0545G4TA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.14 A
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT-223
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ZXMN0545G4TA Datasheet (PDF)

 ..1. Size:211K  zetex
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ZXMN0545G4TA

ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

 4.1. Size:213K  diodes
zxmn0545g4.pdf pdf_icon

ZXMN0545G4TA

ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

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History: DMP22M2UPS | MC08N005C | IRLR024 | CED05N8 | STM101N | AON6794 | BL10N70-A

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