ZXMN0545G4TA Spec and Replacement
Type Designator: ZXMN0545G4TA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.14 A
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT-223
ZXMN0545G4TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN0545G4TA Specs
zxmn0545g4ta.pdf
ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ... See More ⇒
zxmn0545g4.pdf
ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ... See More ⇒
Detailed specifications: ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC , ZXM66P03N8TA , ZXMD63C02X , 2SK3878 , ZXMN10A07FTA , ZXMN10A07FTC , ZXMN10A07ZTA , ZXMN10A08E6TA , ZXMN10A08E6TC , ZXMN10A09KTC , ZXMN10A11GTA , ZXMN10A11GTC .
History: ZXMN3A01Z
Keywords - ZXMN0545G4TA MOSFET specs
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History: ZXMN3A01Z
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