All MOSFET. ZXMN0545G4TA Datasheet

 

ZXMN0545G4TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN0545G4TA
   Marking Code: ZXMN0545
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.14 A
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT-223

 ZXMN0545G4TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN0545G4TA Datasheet (PDF)

 ..1. Size:211K  zetex
zxmn0545g4ta.pdf

ZXMN0545G4TA ZXMN0545G4TA

ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

 4.1. Size:213K  diodes
zxmn0545g4.pdf

ZXMN0545G4TA ZXMN0545G4TA

ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ZXMC4A16DN8 | IXTP1R4N120P

 

 
Back to Top