ZXMN10A25KTC Todos los transistores

 

ZXMN10A25KTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN10A25KTC
   Código: ZXMN10A25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9.85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 3.7 nS
   Cossⓘ - Capacitancia de salida: 57.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET ZXMN10A25KTC

 

ZXMN10A25KTC Datasheet (PDF)

 ..1. Size:187K  diodes
zxmn10a25ktc.pdf

ZXMN10A25KTC
ZXMN10A25KTC

A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note

 4.1. Size:608K  diodes
zxmn10a25k.pdf

ZXMN10A25KTC
ZXMN10A25KTC

ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

 5.1. Size:625K  diodes
zxmn10a25g.pdf

ZXMN10A25KTC
ZXMN10A25KTC

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

 5.2. Size:623K  zetex
zxmn10a25gta.pdf

ZXMN10A25KTC
ZXMN10A25KTC

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


ZXMN10A25KTC
  ZXMN10A25KTC
  ZXMN10A25KTC
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top