ZXMN10A25KTC Datasheet. Specs and Replacement

Type Designator: ZXMN10A25KTC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 9.85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 57.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-252

ZXMN10A25KTC substitution

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ZXMN10A25KTC datasheet

 ..1. Size:187K  diodes
 zxmn10a25ktc.pdf pdf_icon

ZXMN10A25KTC

A Product Line of Diodes Incorporated Green ZXMN10A25K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25 C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note ... See More ⇒

 4.1. Size:608K  diodes
 zxmn10a25k.pdf pdf_icon

ZXMN10A25KTC

ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (V) ID (A) 0.125 @ VGS= 10V 6.4 100 0.150 @ VGS= 6V 5.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistanc... See More ⇒

 5.1. Size:625K  diodes
 zxmn10a25g.pdf pdf_icon

ZXMN10A25KTC

ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.125 @ VGS= 10V 4 100 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resist... See More ⇒

 5.2. Size:623K  zetex
 zxmn10a25gta.pdf pdf_icon

ZXMN10A25KTC

ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.125 @ VGS= 10V 4 100 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resist... See More ⇒

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Detailed specifications: ZXMN10A07ZTA, ZXMN10A08E6TA, ZXMN10A08E6TC, ZXMN10A09KTC, ZXMN10A11GTA, ZXMN10A11GTC, ZXMN10A11KTC, ZXMN10A25GTA, SKD502T, ZXMN10B08E6TA, ZXMN10B08E6TC, ZXMN15A27KTC, ZXMN20B28KTC, ZXMN2A01E6TA, ZXMN2A01E6TC, ZXMN2A01FTA, ZXMN2A01FTC

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