All MOSFET. ZXMN10A25KTC Datasheet

 

ZXMN10A25KTC Datasheet and Replacement


   Type Designator: ZXMN10A25KTC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 9.85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 57.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-252
 

 ZXMN10A25KTC substitution

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ZXMN10A25KTC Datasheet (PDF)

 ..1. Size:187K  diodes
 zxmn10a25ktc.pdf pdf_icon

ZXMN10A25KTC

A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note

 4.1. Size:608K  diodes
 zxmn10a25k.pdf pdf_icon

ZXMN10A25KTC

ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

 5.1. Size:625K  diodes
 zxmn10a25g.pdf pdf_icon

ZXMN10A25KTC

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

 5.2. Size:623K  zetex
 zxmn10a25gta.pdf pdf_icon

ZXMN10A25KTC

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

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Datasheet: ZXMN10A07ZTA , ZXMN10A08E6TA , ZXMN10A08E6TC , ZXMN10A09KTC , ZXMN10A11GTA , ZXMN10A11GTC , ZXMN10A11KTC , ZXMN10A25GTA , IRF9540N , ZXMN10B08E6TA , ZXMN10B08E6TC , ZXMN15A27KTC , ZXMN20B28KTC , ZXMN2A01E6TA , ZXMN2A01E6TC , ZXMN2A01FTA , ZXMN2A01FTC .

History: SML1001R3BN

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