ZXMN10A25KTC - Даташиты. Аналоги. Основные параметры
Наименование производителя: ZXMN10A25KTC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 9.85 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 3.7 ns
Cossⓘ - Выходная емкость: 57.3 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: TO-252
Аналог (замена) для ZXMN10A25KTC
ZXMN10A25KTC Datasheet (PDF)
zxmn10a25ktc.pdf

A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note
zxmn10a25k.pdf

ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc
zxmn10a25g.pdf

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist
zxmn10a25gta.pdf

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist
Другие MOSFET... ZXMN10A07ZTA , ZXMN10A08E6TA , ZXMN10A08E6TC , ZXMN10A09KTC , ZXMN10A11GTA , ZXMN10A11GTC , ZXMN10A11KTC , ZXMN10A25GTA , SPP20N60C3 , ZXMN10B08E6TA , ZXMN10B08E6TC , ZXMN15A27KTC , ZXMN20B28KTC , ZXMN2A01E6TA , ZXMN2A01E6TC , ZXMN2A01FTA , ZXMN2A01FTC .
History: 2SJ246L | CS12N80V | IRF7726
History: 2SJ246L | CS12N80V | IRF7726



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