ZXMN2A01FTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN2A01FTA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.21 nS
Cossⓘ - Capacitancia de salida: 59 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de ZXMN2A01FTA MOSFET
ZXMN2A01FTA Datasheet (PDF)
zxmn2a01fta.pdf

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn2a01ftc.pdf

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn2a01f.pdf

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn2a01f.pdf

Product specificationZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23
Otros transistores... ZXMN10A25GTA , ZXMN10A25KTC , ZXMN10B08E6TA , ZXMN10B08E6TC , ZXMN15A27KTC , ZXMN20B28KTC , ZXMN2A01E6TA , ZXMN2A01E6TC , IRF1407 , ZXMN2A01FTC , ZXMN2A02N8TA , ZXMN2A02X8TA , ZXMN2A02X8TC , ZXMN2A03E6TA , ZXMN2A03E6TC , ZXMN2A14FTA , ZXMN2B01FTA .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
ru6888r | 2sc1815y | ktc3964 | s9013 transistor equivalent | 60n60 mosfet | 2sc2412 | 2sc372 | 2sd400 datasheet