All MOSFET. ZXMN2A01FTA Datasheet

 

ZXMN2A01FTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN2A01FTA
   Marking Code: 7N2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 5.21 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23

 ZXMN2A01FTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN2A01FTA Datasheet (PDF)

 ..1. Size:216K  zetex
 zxmn2a01fta.pdf

ZXMN2A01FTA ZXMN2A01FTA

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 4.1. Size:216K  zetex
 zxmn2a01ftc.pdf

ZXMN2A01FTA ZXMN2A01FTA

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 5.1. Size:217K  diodes
 zxmn2a01f.pdf

ZXMN2A01FTA ZXMN2A01FTA

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 5.2. Size:79K  tysemi
 zxmn2a01f.pdf

ZXMN2A01FTA ZXMN2A01FTA

Product specificationZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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