ZXMN2A01FTA Datasheet. Specs and Replacement
Type Designator: ZXMN2A01FTA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.21 nS
Cossⓘ - Output Capacitance: 59 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT-23
ZXMN2A01FTA substitution
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ZXMN2A01FTA datasheet
zxmn2a01f.pdf
Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 ... See More ⇒
Detailed specifications: ZXMN10A25GTA, ZXMN10A25KTC, ZXMN10B08E6TA, ZXMN10B08E6TC, ZXMN15A27KTC, ZXMN20B28KTC, ZXMN2A01E6TA, ZXMN2A01E6TC, IRFB3607, ZXMN2A01FTC, ZXMN2A02N8TA, ZXMN2A02X8TA, ZXMN2A02X8TC, ZXMN2A03E6TA, ZXMN2A03E6TC, ZXMN2A14FTA, ZXMN2B01FTA
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
