ZXMN4A06KTC Todos los transistores

 

ZXMN4A06KTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN4A06KTC
   Código: ZXMN4A06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 17.1 nC
   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 133 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: DPAK

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ZXMN4A06KTC Datasheet (PDF)

 ..1. Size:561K  zetex
zxmn4a06ktc.pdf

ZXMN4A06KTC
ZXMN4A06KTC

ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance

 5.1. Size:564K  diodes
zxmn4a06k.pdf

ZXMN4A06KTC
ZXMN4A06KTC

ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance

 6.1. Size:168K  diodes
zxmn4a06g.pdf

ZXMN4A06KTC
ZXMN4A06KTC

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F

 6.2. Size:376K  diodes
zxmn4a06gq.pdf

ZXMN4A06KTC
ZXMN4A06KTC

ZXMN4A06GQGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET

 6.3. Size:167K  zetex
zxmn4a06gta.pdf

ZXMN4A06KTC
ZXMN4A06KTC

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F

 6.4. Size:946K  cn vbsemi
zxmn4a06gt.pdf

ZXMN4A06KTC
ZXMN4A06KTC

ZXMN4A06GTwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

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