ZXMN4A06KTC
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN4A06KTC
Marking Code: ZXMN4A06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 9.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 10.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.1
nC
trⓘ - Rise Time: 3.8
nS
Cossⓘ -
Output Capacitance: 133
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
DPAK
ZXMN4A06KTC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN4A06KTC
Datasheet (PDF)
..1. Size:561K zetex
zxmn4a06ktc.pdf
ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance
5.1. Size:564K diodes
zxmn4a06k.pdf
ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance
6.1. Size:168K diodes
zxmn4a06g.pdf
ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F
6.2. Size:376K diodes
zxmn4a06gq.pdf
ZXMN4A06GQGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET
6.3. Size:167K zetex
zxmn4a06gta.pdf
ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F
6.4. Size:946K cn vbsemi
zxmn4a06gt.pdf
ZXMN4A06GTwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET
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