ZXMN4A06KTC Specs and Replacement
Type Designator: ZXMN4A06KTC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 9.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 133 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: DPAK
ZXMN4A06KTC substitution
- MOSFET ⓘ Cross-Reference Search
ZXMN4A06KTC datasheet
zxmn4a06g.pdf
ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-resistance F... See More ⇒
zxmn4a06gq.pdf
ZXMN4A06GQ Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET... See More ⇒
Detailed specifications: ZXMN3A14FTA, ZXMN3B01FTA, ZXMN3B04N8TA, ZXMN3B04N8TC, ZXMN3B14FTA, ZXMN3F30FHTA, ZXMN4A06GQ, ZXMN4A06GTA, IRF1405, ZXMN6A07FTA, ZXMN6A07FTC, ZXMN6A07ZTA, ZXMN6A08E6Q, ZXMN6A08E6TA, ZXMN6A08E6TC, ZXMN6A08GTA, ZXMN6A08KTC
Keywords - ZXMN4A06KTC MOSFET specs
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