ZXMN4A06KTC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ZXMN4A06KTC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 9.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10.9 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.8 ns
Cossⓘ - Выходная емкость: 133 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: DPAK
- подбор MOSFET транзистора по параметрам
ZXMN4A06KTC Datasheet (PDF)
zxmn4a06ktc.pdf

ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance
zxmn4a06k.pdf

ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance
zxmn4a06g.pdf

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F
zxmn4a06gq.pdf

ZXMN4A06GQGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SL30N06D | IPAN60R280PFD7S | NCEP055N10G | IRFP441R | FDP023N08B | AFP3497 | AO3423
History: SL30N06D | IPAN60R280PFD7S | NCEP055N10G | IRFP441R | FDP023N08B | AFP3497 | AO3423



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