ZXMN6A07FTA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN6A07FTA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.4 nS

Cossⓘ - Capacitancia de salida: 19.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: SOT-23

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ZXMN6A07FTA datasheet

 ..1. Size:527K  zetex
 zxmn6a07fta.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 1.4 60 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 4.1. Size:527K  zetex
 zxmn6a07ftc.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 1.4 60 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 5.1. Size:531K  diodes
 zxmn6a07f.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 1.4 60 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 5.2. Size:1319K  cn vbsemi
 zxmn6a07f.pdf pdf_icon

ZXMN6A07FTA

ZXMN6A07F www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G

MOSTRAR MÁS

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